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Structure study of GaN:Mg films by X-ray absorption near-edge structure spectroscopy
Y. C. Pan
*
, S. F. Wang
, W. H. Lee
, W. C. Lin
, C. I. Chiang
, H. Chang
, H. H. Hsieh
, J. M. Chen
, D. S. Lin
, M. C. Lee
,
Wei-Kuo Chen
, W. H. Chen
*
此作品的通信作者
電子物理學系
研究成果
:
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3
引文 斯高帕斯(Scopus)
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Keyphrases
Doping Concentration
100%
Cubic Phase
100%
Mg Films
100%
X-ray Absorption Near Edge Structure (XANES)
100%
X-ray Absorption Edge
100%
Mg-doped GaN
50%
Stacking Faults
50%
Mg Doping
50%
Film Surface
50%
Vapor Phase Epitaxy
50%
Incident Angle
50%
K-edge
50%
Spectral Characteristics
50%
Edge Evaluation
50%
X-ray Beam
50%
Phase Composition
50%
Phase Component
50%
Hexagonal Phase
50%
Optical Micrograph
50%
Characteristic Variation
50%
Crystal Stacking
50%
In Dopant
50%
Physics
X Ray Absorption
100%
XANES Spectroscopy
100%
Fine Structure
50%
Fine Structure Spectrum
50%
Crystal Structure
50%
Crystal Defect
50%
Vapor Phase Epitaxy
50%
X Ray
50%
Engineering
Ray Absorption
100%
Dopant Concentration
66%
Micrograph
33%
Film Surface
33%
Incident Angle
33%
Phase Component
33%
Spectral Characteristic
33%
Phase Composition
33%
Crystal Structure
33%
Material Science
Film
100%
X-Ray Absorption near Edge Structure
100%
Doping (Additives)
50%
Vapor Phase Epitaxy
25%
Surface (Surface Science)
25%
Crystal Defect
25%
Phase Composition
25%
Crystal Structure
25%