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Structure and Strain Relaxation of GaN Nanorods Grown on Homoepitaxial Surface via Controlling Irregular Mask
Chang Hsun Huang, Anahita Pakzad,
Wei-I Lee
, Yi-Chia Chou
*
*
此作品的通信作者
電子物理學系
智慧半導體奈米系統技術研究中心
研究成果
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同行評審
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引文 斯高帕斯(Scopus)
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Keyphrases
GaN Nanorods
100%
Strain Relaxation
100%
Irregular Mask
100%
Structure Relaxation
100%
Homoepitaxial
100%
Silica
50%
Nanorods
50%
High Coverage
50%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
25%
Cathodoluminescence
25%
Single-crystalline
25%
Residual Strain
25%
Hydride Vapor Phase Epitaxy
25%
Sidewall
25%
Crystal Quality
25%
Freestanding GaN Substrate
25%
As-grown
25%
Photoluminescence Measurements
25%
Growth Rate
25%
Raman Spectra
25%
Luminescence
25%
Scanning Transmission Electron Microscopy
25%
Strain Distribution
25%
Nanofabrication
25%
Growth Duration
25%
Quality Orientation
25%
Defect Signal
25%
Lattice Orientation
25%
Strain Mapping
25%
Crystal Lattice
25%
Growth Ambient
25%
Low-cost Approach
25%
V(III)
25%
Engineering
Nanorod
100%
Strain Relaxation
100%
Chemical Vapor Deposition
16%
Vapor Deposition
16%
Residual Strain
16%
Side Wall
16%
Crystalline Quality
16%
Flat Side
16%
Nanofabrication Process
16%
Crystal Structure
16%
Raman Spectra
16%
Material Science
Nanorod
100%
Density
33%
Hydride
16%
Vapor Phase Epitaxy
16%
Photoluminescence
16%
Luminescence
16%
Plasma-Enhanced Chemical Vapor Deposition
16%
Cathodoluminescence
16%
Scanning Transmission Electron Microscopy
16%
Surface (Surface Science)
16%