摘要
ZnSe nanowires have been successfully synthesized through chemical vapor deposition assisted by laser ablation in a tube furnace on a silicon substrate coated with a gold film of 2 nm thickness. X-ray powder diffraction measurements reveal that the synthesized products had pure hexagonal wurtzite structure. The microstructures and chemical composition of the as-grown nanowires have been investigated by means of electron microscopy, energy dispersive spectroscopy, photoluminescence and Raman spectroscopy. The results reveal that the as-grown material consists of ZnSe nanowires with diameters ranging from 60-100 nm and with lengths up to several tens of micrometers. High resolution transmission electron microscopy and selected area electron diffraction indicated that as-synthesized nanowires were single crystalline in nature. Micro-photoluminescence studies on ZnSe nanowire reveal strong emission at 460 nm. The Raman peak at 251 cm(-1) is attributed to the longitudinal optic phonon mode of ZnSe.
原文 | American English |
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頁(從 - 到) | 1503-1506 |
期刊 | International Journal of Materials Research |
卷 | 102 |
發行號 | 12 |
DOIs | |
出版狀態 | Published - 14 5月 2011 |