Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

J. H. Wang, Po-Tsun Liu, T. S. Chang, T. C. Chang, L. J. Chen*

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.

原文English
頁(從 - 到)393-397
頁數5
期刊Thin Solid Films
469-470
發行號SPEC. ISS.
DOIs
出版狀態Published - 22 12月 2004

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