Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

J. H. Wang; Po-Tsun Liu; T. S. Chang; T. C. Chang; L. J. Chen

doi:10.1016/j.tsf.2004.09.014

Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

J. H. Wang, Po-Tsun Liu, T. S. Chang, T. C. Chang, L. J. Chen^*

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO₂ at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.

原文	English
頁（從 - 到）	393-397
頁數	5
期刊	Thin Solid Films
卷	469-470
發行號	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.09.014
出版狀態	Published - 22 12月 2004

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title = "Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization",

abstract = "The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.",

keywords = "Copper silicide, Dielectric constant, Porous polysilazane",

author = "Wang, {J. H.} and Po-Tsun Liu and Chang, {T. S.} and Chang, {T. C.} and Chen, {L. J.}",

year = "2004",

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doi = "10.1016/j.tsf.2004.09.014",

language = "English",

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TY - JOUR

T1 - Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

AU - Wang, J. H.

AU - Liu, Po-Tsun

AU - Chang, T. S.

AU - Chang, T. C.

AU - Chen, L. J.

PY - 2004/12/22

Y1 - 2004/12/22

N2 - The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.

AB - The dielectric constant of porous polysilazane (PPSZ) film was as low as 2.2 owing to the high porosity and uniformity of the film. The copper suicide was found to form between Cu and the PPSZ film after annealing at 550 °C for 30 min due to the SiO desorption from PPSZ. The oxidation behaviors on broken PPSZ films catalyzed by copper suicide were found. The copper suicide reacts with oxygen to form Cu and SiO2 at room temperature. The leakage current of the broken PPSZ film after annealing at 550 °C for 30 min was found to decrease with exposure in air for a few days at room temperature.

KW - Copper silicide

KW - Dielectric constant

KW - Porous polysilazane

UR - http://www.scopus.com/inward/record.url?scp=10044288327&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.09.014

DO - 10.1016/j.tsf.2004.09.014

M3 - Article

AN - SCOPUS:10044288327

SN - 0040-6090

VL - 469-470

SP - 393

EP - 397

JO - Thin Solid Films

JF - Thin Solid Films

IS - SPEC. ISS.

ER -

Structural characteristics and interfacial reactions of low dielectric constant porous polysilazane for Cu metallization

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