Structural and optical properties of InN/GaN nanodots grown by metalorganic chemical vapor deposition

Wen-Hao Chang; Lin Lee; Ching Yu Chen; Wen Che Tsai; Hsuan Lin; Wu-Ching Chou; Ming Chih Lee; Wei-Kuo Chen

doi:10.1002/pssc.200779254

Structural and optical properties of InN/GaN nanodots grown by metalorganic chemical vapor deposition

Wen-Hao Chang^*, Lin Lee, Ching Yu Chen, Wen Che Tsai, Hsuan Lin, Wu-Ching Chou, Ming Chih Lee, Wei-Kuo Chen

^*此作品的通信作者

電子物理學系

研究成果: Conference article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

InN nanodots grown on GaN by metalorganic chemical vapor deposition (MOCVD) using conventional growth mode as well as flow-rate modulation epitaxy (FME) at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN dots and their photoluminescence (PL) properties. The best growth efficiency of InN was achieved by FME at around 650 °C. The residual carrier concentration and PL efficiency was also be improved when a high growth temperature was used. Our results indicated that InN nanodots can be grown at a temperature even higher than 700 °C while maintain their optical quality.

原文	English
頁（從 - 到）	3014-3016
頁數	3
期刊	Physica Status Solidi (C) Current Topics in Solid State Physics
卷	5
發行號	9
DOIs	https://doi.org/10.1002/pssc.200779254
出版狀態	Published - 7月 2008
事件	34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan 持續時間: 15 10月 2007 → 18 10月 2007

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10.1002/pssc.200779254

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title = "Structural and optical properties of InN/GaN nanodots grown by metalorganic chemical vapor deposition",

abstract = "InN nanodots grown on GaN by metalorganic chemical vapor deposition (MOCVD) using conventional growth mode as well as flow-rate modulation epitaxy (FME) at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN dots and their photoluminescence (PL) properties. The best growth efficiency of InN was achieved by FME at around 650 °C. The residual carrier concentration and PL efficiency was also be improved when a high growth temperature was used. Our results indicated that InN nanodots can be grown at a temperature even higher than 700 °C while maintain their optical quality.",

author = "Wen-Hao Chang and Lin Lee and Chen, {Ching Yu} and Tsai, {Wen Che} and Hsuan Lin and Wu-Ching Chou and Lee, {Ming Chih} and Wei-Kuo Chen",

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language = "English",

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T1 - Structural and optical properties of InN/GaN nanodots grown by metalorganic chemical vapor deposition

AU - Chang, Wen-Hao

AU - Lee, Lin

AU - Chen, Ching Yu

AU - Tsai, Wen Che

AU - Lin, Hsuan

AU - Chou, Wu-Ching

AU - Lee, Ming Chih

AU - Chen, Wei-Kuo

PY - 2008/7

Y1 - 2008/7

N2 - InN nanodots grown on GaN by metalorganic chemical vapor deposition (MOCVD) using conventional growth mode as well as flow-rate modulation epitaxy (FME) at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN dots and their photoluminescence (PL) properties. The best growth efficiency of InN was achieved by FME at around 650 °C. The residual carrier concentration and PL efficiency was also be improved when a high growth temperature was used. Our results indicated that InN nanodots can be grown at a temperature even higher than 700 °C while maintain their optical quality.

AB - InN nanodots grown on GaN by metalorganic chemical vapor deposition (MOCVD) using conventional growth mode as well as flow-rate modulation epitaxy (FME) at various growth temperatures (550-730 °C) were investigated. We found that different precursor injection schemes together with the effect of growth temperatures greatly influenced the surface morphology of InN dots and their photoluminescence (PL) properties. The best growth efficiency of InN was achieved by FME at around 650 °C. The residual carrier concentration and PL efficiency was also be improved when a high growth temperature was used. Our results indicated that InN nanodots can be grown at a temperature even higher than 700 °C while maintain their optical quality.

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DO - 10.1002/pssc.200779254

M3 - Conference article

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VL - 5

SP - 3014

EP - 3016

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 9

T2 - 34th International Symposium on Compound Semiconductors, ISCS-2007

Y2 - 15 October 2007 through 18 October 2007

ER -

Structural and optical properties of InN/GaN nanodots grown by metalorganic chemical vapor deposition

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