TY - JOUR
T1 - Structural and optical properties of indium-rich InGaN islands
AU - Tsai, Wen Che
AU - Lin, Hsuan
AU - Ke, Wen Chen
AU - Chang, Wen-Hao
AU - Chou, Wu-Ching
AU - Chen, Wei-Kuo
AU - Lee, Ming Chih
PY - 2008/5
Y1 - 2008/5
N2 - Indium-rich InxGa1-xN islands ( x ≥ 0.87) grown by metalorganic chemical vapor deposition at growth temperatures ranging from 550-750°C were investigated. With the increasing growth temperature, the InGaN dot size increases while the dot density decreases due to the enhanced surface migration of In/Ga adatoms at elevated temperatures. In addition, the composition of InGaN islands was also found to be varied with the growth temperature. At lower growth temperatures, a higher Ga content can be achieved due to the relatively lower migration ability of Ga adatoms. At higher growth temperatures, the deposited InGaN material tend to decompose into In-rich islands and a thin Ga-rich layer. Photoluminescence investigations show that these In-rich islands exhibit a near-infrared emission band. For samples grown at higher temperatures, a visible emission band was also observed. The visible emission band may arise from defect bands introduced during the formation of Ga-rich InGaN layer.
AB - Indium-rich InxGa1-xN islands ( x ≥ 0.87) grown by metalorganic chemical vapor deposition at growth temperatures ranging from 550-750°C were investigated. With the increasing growth temperature, the InGaN dot size increases while the dot density decreases due to the enhanced surface migration of In/Ga adatoms at elevated temperatures. In addition, the composition of InGaN islands was also found to be varied with the growth temperature. At lower growth temperatures, a higher Ga content can be achieved due to the relatively lower migration ability of Ga adatoms. At higher growth temperatures, the deposited InGaN material tend to decompose into In-rich islands and a thin Ga-rich layer. Photoluminescence investigations show that these In-rich islands exhibit a near-infrared emission band. For samples grown at higher temperatures, a visible emission band was also observed. The visible emission band may arise from defect bands introduced during the formation of Ga-rich InGaN layer.
UR - http://www.scopus.com/inward/record.url?scp=77951216503&partnerID=8YFLogxK
U2 - 10.1002/pssc.200778594
DO - 10.1002/pssc.200778594
M3 - Conference article
AN - SCOPUS:77951216503
SN - 1862-6351
VL - 5
SP - 1702
EP - 1705
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 6
T2 - 7th International Conference of Nitride Semiconductors, ICNS-7
Y2 - 16 September 2007 through 21 September 2007
ER -