Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

Y. H. Wu; Li Chang; P. Y. Lin; C. H. Chiang; Jenn-Fang Chen; T. W. Chi

doi:10.1088/0022-3727/42/18/185106

Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

Y. H. Wu, Li Chang, P. Y. Lin, C. H. Chiang, Jenn-Fang Chen, T. W. Chi

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摘要

In this work, we investigated the effect of a 1 nm thick GaAs _94.3Sb_0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.

原文	English
文章編號	185106
頁數	5
期刊	Journal of Physics D: Applied Physics
卷	42
發行號	18
DOIs	https://doi.org/10.1088/0022-3727/42/18/185106
出版狀態	Published - 21 9月 2009

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10.1088/0022-3727/42/18/185106

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@article{14d886202b9a47408442907fa973a3cb,

title = "Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer",

abstract = "In this work, we investigated the effect of a 1 nm thick GaAs 94.3Sb0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.",

author = "Wu, {Y. H.} and Li Chang and Lin, {P. Y.} and Chiang, {C. H.} and Jenn-Fang Chen and Chi, {T. W.}",

year = "2009",

month = sep,

day = "21",

doi = "10.1088/0022-3727/42/18/185106",

language = "English",

volume = "42",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "18",

}

TY - JOUR

T1 - Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

AU - Wu, Y. H.

AU - Chang, Li

AU - Lin, P. Y.

AU - Chiang, C. H.

AU - Chen, Jenn-Fang

AU - Chi, T. W.

PY - 2009/9/21

Y1 - 2009/9/21

N2 - In this work, we investigated the effect of a 1 nm thick GaAs 94.3Sb0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.

AB - In this work, we investigated the effect of a 1 nm thick GaAs 94.3Sb0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.

UR - http://www.scopus.com/inward/record.url?scp=70249113040&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/42/18/185106

DO - 10.1088/0022-3727/42/18/185106

M3 - Article

AN - SCOPUS:70249113040

SN - 0022-3727

VL - 42

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 18

M1 - 185106

ER -

Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

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