Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer

Y. H. Wu, Li Chang, P. Y. Lin, C. H. Chiang, Jenn-Fang Chen, T. W. Chi

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摘要

In this work, we investigated the effect of a 1 nm thick GaAs 94.3Sb0.57 buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.

原文English
文章編號185106
頁數5
期刊Journal of Physics D: Applied Physics
42
發行號18
DOIs
出版狀態Published - 21 九月 2009

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