Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy

Hao-Chung Kuo; S. Thomas; T. U. Norton; B. G. Moser; G. E. Stillman; Chun-Hsiung Lin; Haydn Chen

doi:10.1116/1.590079

Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy

Hao-Chung Kuo^*, S. Thomas, T. U. Norton, B. G. Moser, G. E. Stillman, Chun-Hsiung Lin, Haydn Chen

^*此作品的通信作者

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

We present in this article a comparison of 1.3 μm InAs_0.45P_0.55/In_0.81Ga_0.19P strain-compensated multiple quantum well (SC-MQW) modulators with and without an InP insertion layer. Material quality was evaluated by cross-sectional transmission electron microscope analysis, x-ray rocking curves with dynamical simulations, and photoluminescence measurements. Devices were fabricated and device performance criteria such as contrast ratio (C.R.) and uniformity were also compared. It was found that higher C.R. and highly uniform InAsP/InGaP SC-MQW modulators can be achieved by inserting thin InP layers at the heterointerfaces between InAsP and InGaP.

原文	English
頁（從 - 到）	1377-1380
頁數	4
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	16
發行號	3
DOIs	https://doi.org/10.1116/1.590079
出版狀態	Published - 1998

存取文件

10.1116/1.590079

其它文件與鏈接

Link to publication in Scopus

引用此

Kuo, H.-C., Thomas, S., Norton, T. U., Moser, B. G., Stillman, G. E., Lin, C.-H., & Chen, H. (1998). Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), 1377-1380. https://doi.org/10.1116/1.590079

@article{4fddf9e5d04a4bbd93f715fa9a8827e8,

title = "Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy",

abstract = "We present in this article a comparison of 1.3 μm InAs0.45P0.55/In0.81Ga0.19P strain-compensated multiple quantum well (SC-MQW) modulators with and without an InP insertion layer. Material quality was evaluated by cross-sectional transmission electron microscope analysis, x-ray rocking curves with dynamical simulations, and photoluminescence measurements. Devices were fabricated and device performance criteria such as contrast ratio (C.R.) and uniformity were also compared. It was found that higher C.R. and highly uniform InAsP/InGaP SC-MQW modulators can be achieved by inserting thin InP layers at the heterointerfaces between InAsP and InGaP.",

author = "Hao-Chung Kuo and S. Thomas and Norton, {T. U.} and Moser, {B. G.} and Stillman, {G. E.} and Chun-Hsiung Lin and Haydn Chen",

year = "1998",

doi = "10.1116/1.590079",

language = "English",

volume = "16",

pages = "1377--1380",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

}

Kuo, H-C, Thomas, S, Norton, TU, Moser, BG, Stillman, GE, Lin, C-H & Chen, H 1998, 'Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 卷 16, 編號 3, 頁 1377-1380. https://doi.org/10.1116/1.590079

Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy. / Kuo, Hao-Chung; Thomas, S.; Norton, T. U. 等.
於: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 卷 16, 編號 3, 1998, p. 1377-1380.

研究成果: Article › 同行評審

TY - JOUR

T1 - Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy

AU - Kuo, Hao-Chung

AU - Thomas, S.

AU - Norton, T. U.

AU - Moser, B. G.

AU - Stillman, G. E.

AU - Lin, Chun-Hsiung

AU - Chen, Haydn

PY - 1998

Y1 - 1998

N2 - We present in this article a comparison of 1.3 μm InAs0.45P0.55/In0.81Ga0.19P strain-compensated multiple quantum well (SC-MQW) modulators with and without an InP insertion layer. Material quality was evaluated by cross-sectional transmission electron microscope analysis, x-ray rocking curves with dynamical simulations, and photoluminescence measurements. Devices were fabricated and device performance criteria such as contrast ratio (C.R.) and uniformity were also compared. It was found that higher C.R. and highly uniform InAsP/InGaP SC-MQW modulators can be achieved by inserting thin InP layers at the heterointerfaces between InAsP and InGaP.

AB - We present in this article a comparison of 1.3 μm InAs0.45P0.55/In0.81Ga0.19P strain-compensated multiple quantum well (SC-MQW) modulators with and without an InP insertion layer. Material quality was evaluated by cross-sectional transmission electron microscope analysis, x-ray rocking curves with dynamical simulations, and photoluminescence measurements. Devices were fabricated and device performance criteria such as contrast ratio (C.R.) and uniformity were also compared. It was found that higher C.R. and highly uniform InAsP/InGaP SC-MQW modulators can be achieved by inserting thin InP layers at the heterointerfaces between InAsP and InGaP.

UR - http://www.scopus.com/inward/record.url?scp=11744282956&partnerID=8YFLogxK

U2 - 10.1116/1.590079

DO - 10.1116/1.590079

M3 - Article

AN - SCOPUS:11744282956

SN - 1071-1023

VL - 16

SP - 1377

EP - 1380

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy

摘要

存取文件

其它文件與鏈接

指紋

引用此