Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

S. Gwo; C. L. Wu; C. H. Shen; Wen-Hao Chang; T. M. Hsu

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

S. Gwo^*
, C. L. Wu
, C. H. Shen
, Wen-Hao Chang
, T. M. Hsu

^*此作品的通信作者

電子物理學系

研究成果: Paper › 同行評審

摘要

Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

原文	English
頁面	259-267
頁數	9
出版狀態	Published - 5月 2004
事件	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, 美國持續時間: 9 5月 2004 → 14 5月 2004

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium
國家/地區	美國
城市	San Antonio, TX
期間	9/05/04 → 14/05/04

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Gwo, S., Wu, C. L., Shen, C. H., Chang, W.-H., & Hsu, T. M. (2004). Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. 259-267. 論文發表於 State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, 美國.

@conference{095de9cf91204921b0be4830c49593c5,

title = "Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy",

abstract = "Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.",

keywords = "Indium Nitride (InN), Near-Infrared Photoluminescence (PL), Plasma-Assisted Molecular-Beam Epitaxy (PA-MBE), Silicon (Si)",

author = "S. Gwo and Wu, \{C. L.\} and Shen, \{C. H.\} and Wen-Hao Chang and Hsu, \{T. M.\}",

year = "2004",

month = may,

language = "English",

pages = "259--267",

note = "State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium ; Conference date: 09-05-2004 Through 14-05-2004",

}

Gwo, S, Wu, CL, Shen, CH, Chang, W-H & Hsu, TM 2004, 'Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy', 論文發表於 State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, 美國, 9/05/04 - 14/05/04 頁 259-267.

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy. / Gwo, S.; Wu, C. L.; Shen, C. H. 等.
2004. 259-267 論文發表於 State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium, San Antonio, TX, 美國.

研究成果: Paper › 同行評審

TY - CONF

T1 - Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

AU - Gwo, S.

AU - Wu, C. L.

AU - Shen, C. H.

AU - Chang, Wen-Hao

AU - Hsu, T. M.

PY - 2004/5

Y1 - 2004/5

N2 - Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

AB - Indium nitride epitaxial films have been successfully grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a new buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-type InN layer was confirmed by reflection high-energy electron diffraction, Raman scattering, and X-ray diffraction. At room temperature, these films exhibited strong near-infrared (0.7-0.9 eV) photoluminescence (PL). In contrast to the previous report, no PL signal was observed at ∼1.9 eV, the previously assumed fundamental band gap of wurtzite-type InN.

KW - Indium Nitride (InN)

KW - Near-Infrared Photoluminescence (PL)

KW - Plasma-Assisted Molecular-Beam Epitaxy (PA-MBE)

KW - Silicon (Si)

UR - https://www.scopus.com/pages/publications/5744220665

M3 - Paper

AN - SCOPUS:5744220665

SP - 259

EP - 267

T2 - State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium

Y2 - 9 May 2004 through 14 May 2004

ER -

Structural and light-emitting properties of wurtzite InN films grown on Si(111) by molecular-beam epitaxy

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