@inproceedings{2048d18cd49e4bdb9db3d4a30d009f77,
title = "Structural and electrical properties of high-k HoTiO3 gate dielectrics",
abstract = "We developed a high-k HoTiO3 gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO3 dielectrics annealed at 800°C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect due to the formation of well-crystallized HoTiO3 structure and composition.",
author = "Pan, {Tung Ming} and Yen, {Li Chen} and Hu, {Chia Wei} and Tien-Sheng Chao",
year = "2010",
month = dec,
day = "30",
doi = "10.1149/1.3375607",
language = "English",
isbn = "9781566777919",
series = "ECS Transactions",
number = "1",
pages = "241--245",
booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6",
edition = "1",
note = "Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting ; Conference date: 26-04-2010 Through 27-04-2010",
}