Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC

Bing-Yue Tsui, Jung Chien Cheng*, Cheng Tyng Yen, Chawn Ying Lee

*此作品的通信作者

    研究成果: Article同行評審

    12 引文 斯高帕斯(Scopus)

    摘要

    The effect of pre–metal deposition cleaning on 4H-SiC Schottky barrier diodes (SBDs) by using Ar ion bombardment in an inductively coupled plasma (ICP) chamber was investigated. The ICP treatment produced a thin and Si-depleted amorphous layer on the SiC surface. Partial graphitization was observed in the amorphous layer after post-metal deposition (PMD) annealing. This interfacial layer strongly pinned the Schottky barrier height (SBH). PMD annealing at 500 °C resulted in a constant SBH (approximately 1.1 eV) and narrow SBH distribution (standard deviation < 3 meV). However, the amorphous layer was consumed after 600 °C PMD annealing due to interfacial reactions. These results suggest that the Ar ion bombardment technique with a suitable thermal budget can be used to form relatively uniform SBDs.

    原文English
    頁(從 - 到)83-87
    頁數5
    期刊Solid-State Electronics
    133
    DOIs
    出版狀態Published - 7月 2017

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