Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

Kai Lun Chi; Xin Nan Chenl; Jye-Hong Chen; J. E. Bowers; Ying Jay Yang; Jin Wei Shi

Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

Kai Lun Chi, Xin Nan Chenl, Jye-Hong Chen, J. E. Bowers, Ying Jay Yang, Jin Wei Shi

光電工程學系

研究成果: Paper › 同行評審

摘要

By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

原文	English
頁數	2
出版狀態	Published - 2 12月 2016
事件	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, 日本持續時間: 12 9月 2016 → 15 9月 2016

Conference

Conference	2016 International Semiconductor Laser Conference, ISLC 2016
國家/地區	日本
城市	Kobe
期間	12/09/16 → 15/09/16

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引用此

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title = "Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs",

abstract = "By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.",

keywords = "Resistance, Electrical resistance measurement, Wavelength measurement",

author = "Chi, {Kai Lun} and Chenl, {Xin Nan} and Jye-Hong Chen and Bowers, {J. E.} and Yang, {Ying Jay} and Shi, {Jin Wei}",

year = "2016",

month = dec,

day = "2",

language = "English",

note = "2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",

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TY - CONF

T1 - Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

AU - Chi, Kai Lun

AU - Chenl, Xin Nan

AU - Chen, Jye-Hong

AU - Bowers, J. E.

AU - Yang, Ying Jay

AU - Shi, Jin Wei

PY - 2016/12/2

Y1 - 2016/12/2

N2 - By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

AB - By using parallel two high-speed VCSELs, double increase in maximum output power (4 vs. 8mW), negligible degradation in 3-dB electrical-To-optical bandwidth (∼25 GHz), and strong enhancement in 46 Gbit/sec data transmission through OM4 MMF is achieved compared with those of single reference.

KW - Resistance

KW - Electrical resistance measurement

KW - Wavelength measurement

UR - http://www.scopus.com/inward/record.url?scp=85014166890&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85014166890

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

Strong enhancements in output power and high-speed data transmission performances by using parallel oxide-relief/Zn-diffusion 850 nm VCSELs

摘要

Conference

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