Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off

J. C. Fan; K. Y. Chen; Kuo-Jui Lin; C. P. Lee

doi:10.1049/el:19970717

Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off

J. C. Fan^*, K. Y. Chen, Kuo-Jui Lin, C. P. Lee

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n⁺-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.

原文	English
頁（從 - 到）	1095-1096
頁數	2
期刊	Electronics Letters
卷	33
發行號	12
DOIs	https://doi.org/10.1049/el:19970717
出版狀態	Published - 5 6月 1997

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@article{0c3b865de3b243ed88454afb94606928,

title = "Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off",

abstract = "The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n+-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.",

keywords = "Epitaxial lift-off, Semiconductor junction lasers",

author = "Fan, {J. C.} and Chen, {K. Y.} and Kuo-Jui Lin and Lee, {C. P.}",

year = "1997",

month = jun,

day = "5",

doi = "10.1049/el:19970717",

language = "English",

volume = "33",

pages = "1095--1096",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "12",

}

TY - JOUR

T1 - Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off

AU - Fan, J. C.

AU - Chen, K. Y.

AU - Lin, Kuo-Jui

AU - Lee, C. P.

PY - 1997/6/5

Y1 - 1997/6/5

N2 - The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n+-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.

AB - The transfer of a preprocessed stripe-geometry GaAs-InGaAs laser diode film onto a Pd/Ge/Pd coated n+-Si substrate is reported with the backside contact on Si using epitaxial lifted-off (ELO) technology. The Pd/Ge/Pd metal layers provide ohmic contacts to both the Si substrate and the GaAs film, making vertical conduction through the Si substrate possible. No device degradation was observed after the ELO process and comparable results were obtained for the ELO laser diodes and the diodes without the ELO process.

KW - Epitaxial lift-off

KW - Semiconductor junction lasers

UR - http://www.scopus.com/inward/record.url?scp=0031554342&partnerID=8YFLogxK

U2 - 10.1049/el:19970717

DO - 10.1049/el:19970717

M3 - Article

AN - SCOPUS:0031554342

SN - 0013-5194

VL - 33

SP - 1095

EP - 1096

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Stripe-geometry GaAs-InGaAs laser diode with back-side contact on silicon by epitaxial lift-off

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