Stressor design for FinFETs with air-gap spacers

Darsen D. Lu; Angada B. Sachid; Yao Min Huang; Yi Ju Chen; Chun Chi Chen; Min Cheng Chen; Chen-Ming Hu

doi:10.1109/VLSI-TSA.2017.7942485

Stressor design for FinFETs with air-gap spacers

Darsen D. Lu, Angada B. Sachid, Yao Min Huang, Yi Ju Chen, Chun Chi Chen, Min Cheng Chen, Chen-Ming Hu

國際半導體產業學院

研究成果: Conference contribution › 同行評審

摘要

The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.

原文	English
主出版物標題	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781509058051
DOIs	https://doi.org/10.1109/VLSI-TSA.2017.7942485
出版狀態	Published - 7 6月 2017
事件	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, 台灣持續時間: 24 4月 2017 → 27 4月 2017

出版系列

名字	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Conference

Conference	2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
國家/地區	台灣
城市	Hsinchu
期間	24/04/17 → 27/04/17

存取文件

10.1109/VLSI-TSA.2017.7942485

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Link to publication in Scopus

引用此

Lu, D. D., Sachid, A. B., Huang, Y. M., Chen, Y. J., Chen, C. C., Chen, M. C., & Hu, C.-M. (2017). Stressor design for FinFETs with air-gap spacers. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 文章 7942485 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942485

@inproceedings{dfa304d078cb47eabfb6bb1b871ad541,

title = "Stressor design for FinFETs with air-gap spacers",

abstract = "The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.",

author = "Lu, {Darsen D.} and Sachid, {Angada B.} and Huang, {Yao Min} and Chen, {Yi Ju} and Chen, {Chun Chi} and Chen, {Min Cheng} and Chen-Ming Hu",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 ; Conference date: 24-04-2017 Through 27-04-2017",

year = "2017",

month = jun,

day = "7",

doi = "10.1109/VLSI-TSA.2017.7942485",

language = "English",

series = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017",

address = "美國",

}

Lu, DD, Sachid, AB, Huang, YM, Chen, YJ, Chen, CC, Chen, MC & Hu, C-M 2017, Stressor design for FinFETs with air-gap spacers. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017., 7942485, 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Institute of Electrical and Electronics Engineers Inc., 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017, Hsinchu, 台灣, 24/04/17. https://doi.org/10.1109/VLSI-TSA.2017.7942485

Stressor design for FinFETs with air-gap spacers. / Lu, Darsen D.; Sachid, Angada B.; Huang, Yao Min 等.
2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7942485 (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Stressor design for FinFETs with air-gap spacers

AU - Lu, Darsen D.

AU - Sachid, Angada B.

AU - Huang, Yao Min

AU - Chen, Yi Ju

AU - Chen, Chun Chi

AU - Chen, Min Cheng

AU - Hu, Chen-Ming

PY - 2017/6/7

Y1 - 2017/6/7

N2 - The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.

AB - The impact of various stressor elements on the performance of n-channel FinFET is summarized. Experimental FinFETs with air-gap spacer shows 25% drive current improvement despite slightly larger series resistance. TCAD suggests that carbon incorporation into the fin is the most likely explanation for drive current increase.

UR - http://www.scopus.com/inward/record.url?scp=85023168243&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2017.7942485

DO - 10.1109/VLSI-TSA.2017.7942485

M3 - Conference contribution

AN - SCOPUS:85023168243

T3 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

BT - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Y2 - 24 April 2017 through 27 April 2017

ER -

Lu DD, Sachid AB, Huang YM, Chen YJ, Chen CC, Chen MC 等. Stressor design for FinFETs with air-gap spacers. 於 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 7942485. (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). doi: 10.1109/VLSI-TSA.2017.7942485

Stressor design for FinFETs with air-gap spacers

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