Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application

Chien Hao Chen*, T. L. Lee, Tuo-Hung Hou, C. L. Chen, C. C. Chen, J. W. Hsu, K. L. Cheng, Y. H. Chiu, H. J. Tao, Y. Jin, C. H. Diaz, S. C. Chen, M. S. Liang

*此作品的通信作者

    研究成果: Conference contribution同行評審

    133 引文 斯高帕斯(Scopus)

    指紋

    深入研究「Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application」主題。共同形成了獨特的指紋。

    Engineering & Materials Science