Stress memorization technique (SMT) by selectively strained-nitride capping for sub-65nm high-performance strained-Si device application
Chien Hao Chen*, T. L. Lee, Tuo-Hung Hou, C. L. Chen, C. C. Chen, J. W. Hsu, K. L. Cheng, Y. H. Chiu, H. J. Tao, Y. Jin, C. H. Diaz, S. C. Chen, M. S. Liang
*此作品的通信作者
研究成果: Conference contribution › 同行評審
133
引文
斯高帕斯(Scopus)