Strategy of Mitigating Breakdown Interference and Yield Loss in Crossbar Memory

Che Chia Chang, I. Ting Wang, Hsin Hui Huang, Boris Hudec, Ming Hung Wu, Chih Cheng Chang, Po Tsun Liu, Tuo Hung Hou*


研究成果: Article同行評審


The fault devices induced by device breakdown (BD) are unavoidable due to defect formation during fabrication or along with device cycling stress. The BD cells not only deteriorate device yield, but they also introduce sneak current and result in cell-to-cell interference in the high density crossbar array, which further produces severe array yield loss. Although the BD interference is important, methods of alleviation is less discussed. In this work, we evaluate the strategy of mitigating the strong interference between normal cells and leaky BD cells. We show that while a sufficiently high device yield is the prerequisite, optimizing cell parameters such as resistance of the BD cell and line resistance are proven crucial. However, the yield loss induced by BD interference is not easily compensated using naïve redundancy designs. Therefore, a careful optimization on array partition is thus required. We show that with a device yield of 99% and a total memory capacity of megabits, partitioning into a smaller array size( < 128times128) provides a higher area density than that into larger array sizes. Finally, we proposed a testing bias scheme to rapidly evaluate the device and array yields with ann-time speedup in test latency for ann times narray. The proposed testing bias scheme provides an effective way of ruling out inappropriate low-yield arrays in a memory bank with multiple array blocks.

頁(從 - 到)6082-6086
期刊IEEE Transactions on Electron Devices
出版狀態Published - 1 12月 2021


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