Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling

Jenn-Fang Chen*, R. S. Hsiao, Y. P. Chen, J. S. Wang, J. Y. Chi

*此作品的通信作者

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

We present detailed studies of the onset of strain relaxation in InAsInGaAs quantum dots. We show that the ground-state photoluminescence (PL) emission redshifts with increasing the InAs coverage before relaxation and blueshifts when relaxation occurs. PL spectra of the relaxed samples show two predominant families of dots with very different temperature-dependent efficiency. By comparison we show that the dots emitting at long wavelength are degraded by relaxation while the dots emitting at short wavelength remain coherently strained. Consequently, the PL spectra are dominated by the dots emitting at short wavelength, leading to the observed blueshift. This result suggests that the relaxation does not occur uniformly. In addition, we show that the relaxation occurs in the dot bottom interface.

原文English
文章編號141911
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號14
DOIs
出版狀態Published - 3 10月 2005

指紋

深入研究「Strain relaxation in InAs/InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling」主題。共同形成了獨特的指紋。

引用此