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Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling
Peichen Yu
*
, Min An Tsai, Ching Hua Chiu,
Hao-Chung Kuo
, Yuh Renn Wu
*
此作品的通信作者
光電工程學系
研究成果
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Conference article
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Keyphrases
Indium Gallium Nitride (InGaN)
100%
Strain Relaxation
100%
Nanopillars
100%
Focused Ion Beam Milling
100%
Relaxation Characteristics
100%
Micro-photoluminescence
25%
High Efficiency
25%
Full Width at Half Maximum
25%
Wavelength Range
25%
Blue Shift
25%
As-grown
25%
Multiple Quantum Wells
25%
Power Dependence
25%
Nanodevices
25%
Radiative Recombination Rate
25%
Blue Wavelength
25%
Energy Spectrum
25%
Energy Shift
25%
PL Measurements
25%
Emission Region
25%
Strain Tensor
25%
Spectrum Broadening
25%
Valence Force Field
25%
Engineering
Strain Relaxation
100%
Focused Ion Beam
100%
Nanopillar
100%
Quantum Well
25%
Blueshift
25%
Broadening
25%
Radiative Recombination Rate
25%
Energy Spectra
25%
Strain Tensor
25%
Energy Shift
25%
Spatial Variation
25%
Field Method
25%
Physics
Ion Beam
100%
Blue Shift
50%
Multiple Quantum Well
50%
Field Theory (Physics)
50%
Photoluminescence
50%