Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Keyphrases

• Indium Gallium Nitride (InGaN) 100%
• Strain Relaxation 100%
• Focused Ion Beam Milling 100%
• Relaxation Characteristics 100%
• Nanopillar 100%
• High Efficiency 25%
• Full Width at Half Maximum 25%
• Wavelength Range 25%
• Blue Shift 25%
• As-grown 25%
• InGaN Quantum Wells 25%
• Power Dependence 25%
• Nanodevices 25%
• Radiative Recombination Rate 25%
• Blue Wavelength 25%
• Energy Spectrum 25%
• Energy Shift 25%
• PL Measurements 25%
• Emission Region 25%
• Strain Tensor 25%
• Spectrum Broadening 25%
• Valence Force Field 25%
• Micro-photoluminescence 25%

Physics

• Ion Beam 100%
• Blue Shift 50%
• Multiple Quantum Well 50%
• Field Theory (Physics) 50%
• Photoluminescence 50%