Strain relaxation characteristics of a single InGaN-based nanopillar fabricated by focused ion beam milling

Peichen Yu*, Min An Tsai, Ching Hua Chiu, Hao-Chung Kuo, Yuh Renn Wu

*此作品的通信作者

研究成果: Conference article同行評審

摘要

A free-standing nanopillar with a diameter of 300 nm, and a height of 2 urn is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.

原文English
文章編號71351Y
期刊Proceedings of SPIE - The International Society for Optical Engineering
7135
DOIs
出版狀態Published - 1 12月 2008
事件Optoelectronic Materials and Devices III - Hangzhou, China
持續時間: 27 10月 200830 10月 2008

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