Strain relaxation and induced defects in InAsSb self-assembled quantum dots

Jenn-Fang Chen*, R. S. Hsiao, W. D. Huang, Y. H. Wu, Li Chang, J. S. Wang, J. Y. Chi

*此作品的通信作者

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

指紋

深入研究「Strain relaxation and induced defects in InAsSb self-assembled quantum dots」主題。共同形成了獨特的指紋。

Keyphrases

Material Science