Strain relaxation and induced defects in InAsSb self-assembled quantum dots

Jenn-Fang Chen*, R. S. Hsiao, W. D. Huang, Y. H. Wu, Li Chang, J. S. Wang, J. Y. Chi

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

The onset of strain relaxation and induced defects in In As0.94 Sb0.06 quantum dots are investigated. We show that the relaxation causes partial carrier depletion in the dots and drastic carrier depletion in the top GaAs layer due to the introduction of two defect traps at 0.35 and 0.64 eV. This result is consistent with transmission electron microscopy data which show misfit dislocations on the edges of the dot upper boundary and threading dislocations in the top GaAs layer. The bottom GaAs layer is dislocation-free, and thus the strain relaxation may initially occur on the edges of the dots.

原文English
文章編號233113
頁數3
期刊Applied Physics Letters
88
發行號23
DOIs
出版狀態Published - 5 6月 2006

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