Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition

Wen-Hao Chang; Wen Yen Cheng; An Tai Chou; Tzu Min Hsu; Pan Shiu Chen; Zingway Pei; Li Shyue Lai

doi:10.1109/CLEOPR.2003.1277176

Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition

Wen-Hao Chang, Wen Yen Cheng, An Tai Chou, Tzu Min Hsu, Pan Shiu Chen, Zingway Pei, Li Shyue Lai

電子物理學系

研究成果: Conference contribution › 同行評審

摘要

Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to the emission energy shift in the Ge dots, we found that thinner spacer will lead to remarkable Ge-Si intermixing. Such intermixing can be attributed to the strain-induced material intermixing, which tends to shallow the dot potential, soften the dot/spacer interface sharpness, and hence degrade their room-temperature emission properties.

原文	English
主出版物標題	CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics
主出版物子標題	Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	630
頁數	1
ISBN（電子）	0780377664
DOIs	https://doi.org/10.1109/CLEOPR.2003.1277176
出版狀態	Published - 2003
事件	5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 - Taipei, 台灣持續時間: 15 12月 2003 → 19 12月 2003

出版系列

名字	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
卷	2

Conference

Conference	5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
國家/地區	台灣
城市	Taipei
期間	15/12/03 → 19/12/03

存取文件

10.1109/CLEOPR.2003.1277176

其它文件與鏈接

Link to publication in Scopus

引用此

Chang, W.-H., Cheng, W. Y., Chou, A. T., Hsu, T. M., Chen, P. S., Pei, Z., & Lai, L. S. (2003). Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition. 於 CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings (頁 630). 文章 1277176 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; 卷 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2003.1277176

Chang, Wen-Hao ; Cheng, Wen Yen ; Chou, An Tai 等. / Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition. CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. 頁 630 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest).

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title = "Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition",

abstract = "Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to the emission energy shift in the Ge dots, we found that thinner spacer will lead to remarkable Ge-Si intermixing. Such intermixing can be attributed to the strain-induced material intermixing, which tends to shallow the dot potential, soften the dot/spacer interface sharpness, and hence degrade their room-temperature emission properties.",

author = "Wen-Hao Chang and Cheng, {Wen Yen} and Chou, {An Tai} and Hsu, {Tzu Min} and Chen, {Pan Shiu} and Zingway Pei and Lai, {Li Shyue}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003 ; Conference date: 15-12-2003 Through 19-12-2003",

year = "2003",

doi = "10.1109/CLEOPR.2003.1277176",

language = "English",

series = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

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Chang, W-H, Cheng, WY, Chou, AT, Hsu, TM, Chen, PS, Pei, Z & Lai, LS 2003, Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition. 於 CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings., 1277176, Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest, 卷 2, Institute of Electrical and Electronics Engineers Inc., 頁 630, 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003, Taipei, 台灣, 15/12/03. https://doi.org/10.1109/CLEOPR.2003.1277176

Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition. / Chang, Wen-Hao; Cheng, Wen Yen; Chou, An Tai 等.
CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 630 1277176 (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest; 卷 2).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition

AU - Chang, Wen-Hao

AU - Cheng, Wen Yen

AU - Chou, An Tai

AU - Hsu, Tzu Min

AU - Chen, Pan Shiu

AU - Pei, Zingway

AU - Lai, Li Shyue

PY - 2003

Y1 - 2003

N2 - Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to the emission energy shift in the Ge dots, we found that thinner spacer will lead to remarkable Ge-Si intermixing. Such intermixing can be attributed to the strain-induced material intermixing, which tends to shallow the dot potential, soften the dot/spacer interface sharpness, and hence degrade their room-temperature emission properties.

AB - Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to the emission energy shift in the Ge dots, we found that thinner spacer will lead to remarkable Ge-Si intermixing. Such intermixing can be attributed to the strain-induced material intermixing, which tends to shallow the dot potential, soften the dot/spacer interface sharpness, and hence degrade their room-temperature emission properties.

UR - http://www.scopus.com/inward/record.url?scp=84955274784&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2003.1277176

DO - 10.1109/CLEOPR.2003.1277176

M3 - Conference contribution

AN - SCOPUS:84955274784

T3 - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

SP - 630

BT - CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003

Y2 - 15 December 2003 through 19 December 2003

ER -

Chang WH, Cheng WY, Chou AT, Hsu TM, Chen PS, Pei Z 等. Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition. 於 CLEO/Pacific Rim 2003 - 5th Pacific Rim Conference on Lasers and Electro-Optics: Photonics Lights Innovation, from Nano-Structures and Devices to Systems and Networks, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 630. 1277176. (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). doi: 10.1109/CLEOPR.2003.1277176

Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition

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