Strain-Directed Layer-By-Layer Epitaxy Toward van der Waals Homo- And Heterostructures

Yi Wan, Jing Kai Huang, Chih Piao Chuu, Wei Ting Hsu, Chien Ju Lee, Areej Aljarb, Chun Wei Huang, Ming Hui Chiu, Hao Ling Tang, Ci Lin, Xuechun Zhang, Ching Ming Wei, Sean Li, Wen Hao Chang, Lain Jong Li*, Vincent Tung

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Transition-metal dichalcogenide (TMDC) homo- and heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals (vdW) electronics and optoelectronics. However, most TMDC homo- and heterostacks are created by onerous mechanical exfoliation, followed by a mixing-and-matching process. While versatile enough for pilot demonstrations, these strategies are clearly not scalable for practical technologies and widespread implementations. Here, we report a two-step epitaxy strategy that promotes the growth of second-layer TMDCs on the basal plane of the first TMDCs epilayer. The first-layer TMDCs are grown on substrates where the tensile strength can be tuned by the control of chemical environments. The succeeding epilayers then prefer to grow layer-by-layer on the highly tensile-strained first layers. The result is the growth of high-density TMDC homo (WSe2) bilayers and hetero (WSe2-MoS2) bilayers with an exceedingly high yield (>99% bilayers) and uniformity. A density functional theory simulation further sheds light on how strain engineering shifts the subsequent layer growth preference. Second-harmonic generation and high-angle annular dark-field scanning transmission electron microscopy collectively attest to the AB and AA′ stacking between the TMDC epi- and overlayers. The proposed strategy could be a versatile platform for synthesizing diverse arrays of vdW homo- and heterostacks, thus providing prospects for realizing large-scale and layer-controllable two-dimensional electronics.

原文English
頁(從 - 到)442-453
頁數12
期刊ACS Materials Letters
3
發行號4
DOIs
出版狀態Published - 5 四月 2021

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