TY - GEN
T1 - Statistics of grain boundaries in gate poly-Si
AU - Watanabe, Hiroshi
PY - 2005
Y1 - 2005
N2 - A nanometer-scale variation due to grain boundaries in gate poly-Si is investigated in detail assuming arrangement of grain boundaries obeys the Poisson distribution. Statistics of grain boundaries described here enables us to understand nanoscopic fluctuation in leakage current and threshold voltage shift in MOSFETs. For the first time, these nanoscopic fluctuation and arrangement variation of grain boundaries are related.
AB - A nanometer-scale variation due to grain boundaries in gate poly-Si is investigated in detail assuming arrangement of grain boundaries obeys the Poisson distribution. Statistics of grain boundaries described here enables us to understand nanoscopic fluctuation in leakage current and threshold voltage shift in MOSFETs. For the first time, these nanoscopic fluctuation and arrangement variation of grain boundaries are related.
UR - http://www.scopus.com/inward/record.url?scp=33744784632&partnerID=8YFLogxK
U2 - 10.1109/SISPAD.2005.201467
DO - 10.1109/SISPAD.2005.201467
M3 - Conference contribution
AN - SCOPUS:33744784632
SN - 4990276205
SN - 9784990276201
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 39
EP - 42
BT - 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
Y2 - 1 September 2005 through 3 September 2005
ER -