Statistics of grain boundaries in gate poly-Si

Hiroshi Watanabe*

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

A nanometer-scale variation due to grain boundaries in gate poly-Si is investigated in detail assuming arrangement of grain boundaries obeys the Poisson distribution. Statistics of grain boundaries described here enables us to understand nanoscopic fluctuation in leakage current and threshold voltage shift in MOSFETs. For the first time, these nanoscopic fluctuation and arrangement variation of grain boundaries are related.

原文English
主出版物標題2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
發行者Institute of Electrical and Electronics Engineers Inc.
頁面39-42
頁數4
ISBN(列印)4990276205, 9784990276201
DOIs
出版狀態Published - 2005
事件2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005 - Tokyo, 日本
持續時間: 1 9月 20053 9月 2005

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2005

Conference

Conference2005 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2005
國家/地區日本
城市Tokyo
期間1/09/053/09/05

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