Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

Chia Hui Yu, Ming Hung Han, Hui Wen Cheng, Zhong Cheng Su, Yi-Ming Li*, Hiroshi Watanabe

*此作品的通信作者

研究成果: Conference contribution同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this work, we statistically examine the emerging high-κ/ metal gate work-function fluctuation (WKF) induced threshold voltage (Vth) fluctuations in 16-nm-gate MOSFET devices. Our Monte-Carlo model extensively evaluates the impact of WKF for different technology node, metal grain size, and gate material. This model provides us to identify suitable materials and fabrication processes that can significantly reduce the impact of Vth fluctuation owing to WKF. First, four kinds of gate material are examined and TiN possesses the smallest Vth fluctuation. For fabrication process, a fast deposition of metal at lower temperature prevents the metal grain not to grow to large size result in a smaller variation. In addition, an idea of modeling multilayer metal gate WKF is also presented and discussed, in which the first layer plays the most important role, compared with other layers, for the fluctuation suppression.

原文English
主出版物標題15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
編輯G Baccarani, M Rudan
發行者IEEE
頁面153-156
頁數4
ISBN(列印)9781424476992
DOIs
出版狀態Published - 6 12月 2010
事件15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy
持續時間: 6 9月 20108 9月 2010

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices
發行者IEEE
ISSN(列印)1946-1569

Conference

Conference15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
國家/地區Italy
城市Bologna
期間6/09/108/09/10

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