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Statistical metrology of metal nanocrystal emories with 3-D finite-element analysis
Jonathan Shaw
*
,
Tuo-Hung Hou
, Hassan Raza, Edwin Chihchuan Kan
*
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9
引文 斯高帕斯(Scopus)
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Keyphrases
Metal Nanocrystals
100%
3D Finite Element Analysis
100%
Metrology
100%
Percolation Effect
100%
Nanocrystals
50%
Flash Memory
50%
Gate Length
50%
3D Modeling
50%
Channel Length
50%
Nanowires
50%
Memory Window
50%
Bit Error Rate
50%
Monte Carlo
50%
Threshold Voltage Distribution
50%
Planar Device
50%
Length Scaling
50%
Gate Stack Structure
50%
Scalability Prediction
50%
1D Analysis
50%
Engineering
Metal Nanocrystals
100%
Finite Element Analysis
100%
Flash Memory
50%
Gate Length
50%
Channel Length
50%
Gate Stack
50%
Bit Error Rate
50%
Nanowire
50%
Electrostatic Force
50%
Material Science
Finite Element Method
100%
Percolation
100%
Nanowire
50%
Chemical Engineering
Scalability
100%
Nanowire
100%