Statistical fluctuations of dopant impurities in ion-implanted bipolar transistor structures and the minimum device dimensions for vlsi system reliability

P. R. Prucnal*, Wei Hwang, H. C. Card

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

指紋

深入研究「Statistical fluctuations of dopant impurities in ion-implanted bipolar transistor structures and the minimum device dimensions for vlsi system reliability」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds