Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants

Keyphrases

• Silicon Nanowires (SiNWs) 100%
• Electrical Characteristics 100%
• MOSFET 100%
• Gate-all-around 100%
• Random Dopant Fluctuation 100%
• Discrete Dopants 100%
• Characteristic Fluctuation 100%
• Statistical Device Simulation 100%
• Metal Gate 50%
• Simulation Model 50%
• Physical Mechanism 50%
• Drain Extension 50%
• Device Simulation 50%
• MOSFET Device 50%
• Quantum Mechanical Simulation 50%
• Silicon Nanowire MOSFET 50%
• Full Quantum 50%

Engineering

• Dopants 100%
• Mosfets 100%
• Nanowire 100%
• Experimental Result 33%
• Metal Gate 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%
• Simulation Model 33%
• Quantum Mechanical Simulation 33%

Material Science

• Doping (Additives) 100%
• Silicon 100%
• Nanowire 100%
• Electrical Property 66%
• Metal-Oxide-Semiconductor Field-Effect Transistor 33%