@inproceedings{470322a1fc73464eb197b76c3e78d3e3,
title = "Statistical device simulation of characteristic fluctuation of 10-nm gate-all-around silicon nanowire mosfets induced by various discrete random dopants",
abstract = "We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gate high-κ/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated by using full quantum mechanical simulation and calibrated with experimental results. Physical mechanism of RDs inside channel and penetration from the source/drain extensions into the channel is discussed. Electrical characteristic of the device is estimated with respect to different types of RDF.",
author = "Sung, {Wen Li} and Chang, {Han Tung} and Chen, {Chieh Yang} and Chao, {Pei Jung} and Yi-ming Li",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",
year = "2016",
month = nov,
day = "21",
doi = "10.1109/NANO.2016.7751556",
language = "English",
series = "16th International Conference on Nanotechnology - IEEE NANO 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "951--954",
booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",
address = "United States",
}