Statistical characterization of BTI-induced high-k dielectric traps in nanoscale transistors

Keyphrases

• High-k Dielectric 100%
• Trapped Charge 100%
• Statistical Characterization 100%
• Nanoscale Transistor 100%
• Time Dependence 66%
• Spatial Distribution 33%
• Dielectric 33%
• Activation Energy 33%
• Charge Emission 33%
• Energy Distribution 33%
• NWFET 33%
• Numerical Simulation 33%
• Power Law 33%
• Emission Time 33%
• Statistical Distribution 33%
• Trap Characteristics 33%
• Large Amplitude 33%
• Tail Distribution 33%
• Stress-driven 33%
• Single Charge 33%
• BTI Stress 33%
• Amplitude Distribution 33%
• BTI Recovery 33%
• Statistical Behavior 33%

Engineering

• Dielectrics 100%
• Nanoscale 100%
• Statistical Characterization 100%
• Induced Charge 50%
• Activation Energy 25%
• Metal-Oxide-Semiconductor Field-Effect Transistor 25%
• Nanometre 25%
• Energy Distribution 25%
• Statistical Distribution 25%
• Amplitude Distribution 25%
• Computer Simulation 25%
• Spatial Distribution 25%

Earth and Planetary Sciences

• Dielectric Material 100%
• Emissions 50%
• Time Dependence 50%
• Spatial Distribution 25%
• Energy Distribution 25%
• Power Law 25%
• Statistical Distribution 25%