Keyphrases
Statistical Analysis
100%
Work Function
100%
Process Variation
100%
Metal Gate
100%
Random Dopant Fluctuation
100%
Work Function Fluctuation
100%
Nano-CMOS Circuits
100%
Threshold Voltage Shift
75%
MOSFET
50%
Gate Capacitance
50%
Process Variation Effect
50%
Circuit Reliability
25%
Cut-off Frequency
25%
Device Characteristics
25%
Power Added Efficiency
25%
3-dB Bandwidth
25%
Circuit Performance
25%
Screening Effect
25%
Inversion Layer
25%
High-frequency Characteristics
25%
Amplifier Circuit
25%
Time Estimates
25%
Nanoscale Metal Oxides
25%
Time Characteristics
25%
Simulation Scenarios
25%
Circuit Characteristics
25%
Unity Gain Bandwidth
25%
Characteristic Fluctuation
25%
Intrinsic Fluctuations
25%
Engineering
Dopants
100%
Metal Gate
100%
Process Variation
100%
Voltage Fluctuation
75%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Gate Capacitance
50%
Cutoff Frequency
25%
Nanoscale
25%
Power Added Efficiency
25%
Circuit Performance
25%
Screening Effect
25%
Frequency Characteristic
25%
Intrinsic Parameter
25%
Gain Bandwidth
25%
Amplifier Circuit
25%
Characteristic Circuit
25%