TY - GEN
T1 - Statistical 3D Device Simulation of Full Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs at Sub-3-nm Technology Nodes
AU - Kola, Sekhar Reddy
AU - Li, Yiming
AU - Chen, Chieh Yang
AU - Chuang, Min Hui
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - We for the first time study characteristic fluctuation of gate-all-around silicon nanosheet MOSFETs induced by random dopants fluctuation (RDF), interface trap fluctuation (ITF), and work function fluctuation (WKF), and their combinations. The explored devices affected by the WKF and its combination result in sizeable variability. Because of enigmatical interactions among the aforementioned random factors, overestimated variabilities occur if we only consider one random source each time, compared with the statistical 3D device simulation for full RDF, ITF and WKF at the same time. Notably, 10.78% and 103% overestimations are found for the threshold voltage and off-state current fluctuations.
AB - We for the first time study characteristic fluctuation of gate-all-around silicon nanosheet MOSFETs induced by random dopants fluctuation (RDF), interface trap fluctuation (ITF), and work function fluctuation (WKF), and their combinations. The explored devices affected by the WKF and its combination result in sizeable variability. Because of enigmatical interactions among the aforementioned random factors, overestimated variabilities occur if we only consider one random source each time, compared with the statistical 3D device simulation for full RDF, ITF and WKF at the same time. Notably, 10.78% and 103% overestimations are found for the threshold voltage and off-state current fluctuations.
UR - http://www.scopus.com/inward/record.url?scp=85130471872&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA54299.2022.9771002
DO - 10.1109/VLSI-TSA54299.2022.9771002
M3 - Conference contribution
AN - SCOPUS:85130471872
T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Y2 - 18 April 2022 through 21 April 2022
ER -