Stacked-NMOS triggered silicon-controlled rectifier for ESD protection in high/low-voltage-tolerant I/O interface

Ming-Dou Ker*, Chien Hui Chuang

*此作品的通信作者

    研究成果: Letter同行評審

    9 引文 斯高帕斯(Scopus)

    摘要

    A stacked-NMOS triggered silicon-controlled rectifier (SNTSCR) is proposed as the electrostatic discharge (ESD) clamp device to protect the mixed-voltage I/O buffers of CMOS ICs. This SNTSCR device is fully compatible to general CMOS processes without using the thick gate oxide to overcome the gate-oxide reliability issue. ESD robustness of the proposed SNTSCR device with different layout parameters has been investigated in a 0.35-μm CMOS process. The HBM ESD level of the mixed-voltage I/O buffer with the stacked-NMOS channel width of 120 μm can be obviously improved from the original ∼ 2 kV to be greater than 8 kV by this SNTSCR device with a device dimension of only 60 μm/035 μm.

    原文English
    頁(從 - 到)363-365
    頁數3
    期刊IEEE Electron Device Letters
    23
    發行號6
    DOIs
    出版狀態Published - 1 六月 2002

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