Stacked-nitride oxide gate MISFET with high hot-carrier-immunity

Hiroshi Iwai*, Hisayo Sasaki Momose, Toyota Morimoto, Yoshio Ozawa, Kikuo Yamabe

*此作品的通信作者

研究成果: Conference article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.

原文English
頁(從 - 到)235-238
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 12月 1990
事件1990 International Electron Devices Meeting - San Francisco, CA, USA
持續時間: 9 12月 199012 12月 1990

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