TY - JOUR
T1 - Stacked-nitride oxide gate MISFET with high hot-carrier-immunity
AU - Iwai, Hiroshi
AU - Momose, Hisayo Sasaki
AU - Morimoto, Toyota
AU - Ozawa, Yoshio
AU - Yamabe, Kikuo
PY - 1990/12
Y1 - 1990/12
N2 - The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.
AB - The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.
UR - http://www.scopus.com/inward/record.url?scp=0025575978&partnerID=8YFLogxK
U2 - 10.1109/IEDM.1990.237185
DO - 10.1109/IEDM.1990.237185
M3 - Conference article
AN - SCOPUS:0025575978
SP - 235
EP - 238
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
Y2 - 9 December 1990 through 12 December 1990
ER -