The hot-carrier-induced reliability of LPCVD (low-pressure chemical vapor deposition) stacked nitride oxide MISFETs was studied by changing the nitride and oxide film thickness. When the nitride film was thick, the shift in threshold voltage was significant. When the nitride thickness was decreased to 3-4 nm, this threshold voltage shift was less of a problem, but interface state generation caused trouble. Densification of the stacked film by high temperature RTP was investigated for any further film quality improvements for the hot-carrier reliability. Simple RTA did not improve the reliability at all. On the other hand, RTN on the stacked-nitride film improved it drastically. In addition, after RTN, the stacked-nitride film withstood re-oxidation, while samples tested after RTA did not.
|頁（從 - 到）||235-238|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 12月 1990|
|事件||1990 International Electron Devices Meeting - San Francisco, CA, USA|
持續時間: 9 12月 1990 → 12 12月 1990