Stacked Gate-All-Around Nanosheet Channel Ferroelectric HfxZr1-xO2FETs With NH3Plasma Treatment Featuring High Footprint Current

Dong Ru Hsieh, Chia Chin Lee, Tien Sheng Chao*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Stacked gate-all-around (GAA) nanosheet (NS) channel ferroelectric-HfrmxZr_1-rmxO2 (FE-HZO) FETs without and with NH3 plasma treatment at both TiN/HZO and ZrO2/TiN interfaces were successfully fabricated and their reliability was investigated and discussed. By NH3 plasma at both metal/oxide interfaces to significantly enhance the gate-stack quality and effectively suppress the generation of oxygen vacancies (rmVrmo) and interface traps during the positive gate bias stress (PGBS) test, the devices exhibit an excellent SS of 51.4 mV/dec., a high driving current of 49.5 μ A/μ m, and a strong PGBS immunity, making them attractive for monolithic 3-D Integrated circuit (M3D-IC) applications.

原文English
主出版物標題2023 Silicon Nanoelectronics Workshop, SNW 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面121-122
頁數2
ISBN(電子)9784863488083
DOIs
出版狀態Published - 2023
事件26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
持續時間: 11 6月 202312 6月 2023

出版系列

名字2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
國家/地區Japan
城市Kyoto
期間11/06/2312/06/23

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