Stack gate PZT/Al 2O 3 one transistor ferroelectric memory

Albert Chin; M. Y. Yang; C. L. Sun; San-Yuan Chen

doi:10.1109/55.930683

Stack gate PZT/Al ₂O ₃ one transistor ferroelectric memory

Albert Chin^*, M. Y. Yang, C. L. Sun, San-Yuan Chen

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

66 引文斯高帕斯（Scopus）

摘要

We have developed single transistor ferroelectric memory using stack gate PZT/Al ₂O ₃ structure. For the same ∼40 Å dielectric thickness, the PZT/Al ₂O ₃/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO ₂/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.

原文	American English
頁（從 - 到）	336-338
頁數	3
期刊	Ieee Electron Device Letters
卷	22
發行號	7
DOIs	https://doi.org/10.1109/55.930683
出版狀態	Published - 7月 2001

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title = "Stack gate PZT/Al 2O 3 one transistor ferroelectric memory",

abstract = "We have developed single transistor ferroelectric memory using stack gate PZT/Al 2O 3 structure. For the same ∼40 {\AA} dielectric thickness, the PZT/Al 2O 3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO 2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.",

keywords = "Al O, Ferroelectric, Memory, PZT",

author = "Albert Chin and Yang, {M. Y.} and Sun, {C. L.} and San-Yuan Chen",

year = "2001",

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doi = "10.1109/55.930683",

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AU - Chin, Albert

AU - Yang, M. Y.

AU - Sun, C. L.

AU - Chen, San-Yuan

PY - 2001/7

Y1 - 2001/7

N2 - We have developed single transistor ferroelectric memory using stack gate PZT/Al 2O 3 structure. For the same ∼40 Å dielectric thickness, the PZT/Al 2O 3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO 2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.

AB - We have developed single transistor ferroelectric memory using stack gate PZT/Al 2O 3 structure. For the same ∼40 Å dielectric thickness, the PZT/Al 2O 3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO 2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state. The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.

KW - Al O

KW - Ferroelectric

KW - Memory

KW - PZT

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JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 7

ER -

Stack gate PZT/Al 2O 3 one transistor ferroelectric memory

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Stack gate PZT/Al ₂O ₃ one transistor ferroelectric memory