Stable resistive switching characteristics of Al2O3 layers inserted in HfO2 based RRAM devices

Keyphrases

• Al2O3 Layer 100%
• ALD Growth 16%
• Aluminum Oxide 33%
• Crystallization 16%
• Crystallization Temperature 33%
• Forming Voltage 16%
• HfO2 100%
• HfO2 Thin Films 50%
• High Dielectric Constant 16%
• High-density Integration 16%
• High-speed Operation 16%
• Low Power Consumption 16%
• Low-crystalline 16%
• Memory Application 16%
• Memory Device 100%
• Metal Oxide 16%
• Non-volatile Memory 16%
• Operation Voltage 16%
• Process Compatibility 16%
• Resistive Random Access Memory (ReRAM) 100%
• Resistive Switching 100%
• Stable Operation 16%
• Standard CMOS Technology 16%
• Storage Characteristics 16%
• Switching Cycle 16%
• Switching Layer 16%
• Switching Performance 16%
• Thermal Stability 16%

Engineering

• Experimental Result 12%
• High Dielectric Constant 12%
• High Integration Density 12%
• Low Power Consumption 12%
• Nonvolatile Memory 12%
• Phase Composition 12%
• Random Access Memory 12%
• Random Access Memory Device 100%
• Resistive 100%
• Speed Operation 12%
• Thin Films 37%

Material Science

• Al2O3 100%
• Density 20%
• Metal Oxide 20%
• Permittivity 20%
• Phase Composition 20%
• Thermal Stability 20%
• Thin Films 60%