Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

Szu Yi Chen*, Ta Ya Chu, Jenn-Fang Chen, Chien Ying Su, Chin H. Chen

*此作品的通信作者

研究成果: Article同行評審

156 引文 斯高帕斯(Scopus)

摘要

Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq3, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm2. The 20% decay lifetime (t80) of Cs 2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).

原文English
文章編號053518
期刊Applied Physics Letters
89
發行號5
DOIs
出版狀態Published - 2006

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