Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

Szu Yi Chen; Ta Ya Chu; Jenn-Fang Chen; Chien Ying Su; Chin H. Chen

doi:10.1063/1.2335374

Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

Szu Yi Chen^*, Ta Ya Chu, Jenn-Fang Chen, Chien Ying Su, Chin H. Chen

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電子物理學系

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157 引文斯高帕斯（Scopus）

摘要

Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs₂O dopant between indium-tin oxide bottom cathode and Alq₃, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm². The 20% decay lifetime (t₈₀) of Cs ₂O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).

原文	English
文章編號	053518
期刊	Applied Physics Letters
卷	89
發行號	5
DOIs	https://doi.org/10.1063/1.2335374
出版狀態	Published - 2006

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title = "Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement",

abstract = "Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq3, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm2. The 20% decay lifetime (t80) of Cs 2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).",

author = "Chen, {Szu Yi} and Chu, {Ta Ya} and Jenn-Fang Chen and Su, {Chien Ying} and Chen, {Chin H.}",

year = "2006",

doi = "10.1063/1.2335374",

language = "English",

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journal = "Applied Physics Letters",

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AU - Chen, Szu Yi

AU - Chu, Ta Ya

AU - Chen, Jenn-Fang

AU - Su, Chien Ying

AU - Chen, Chin H.

PY - 2006

Y1 - 2006

N2 - Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq3, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm2. The 20% decay lifetime (t80) of Cs 2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).

AB - Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq3, the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 1m/W at 20 mA/cm2. The 20% decay lifetime (t80) of Cs 2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h).

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DO - 10.1063/1.2335374

M3 - Article

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053518

ER -

Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

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