Stable and efficient organic light emitting diodes based on a single host of p-doped and n-doped layers

Meng Huan Ho; Ming Ta Hsieh; Jenn-Fang Chen; Kuan Heng Lin; Chin H. Chen

doi:10.1889/1.3256826

Stable and efficient organic light emitting diodes based on a single host of p-doped and n-doped layers

Meng Huan Ho, Ming Ta Hsieh, Jenn-Fang Chen, Kuan Heng Lin, Chin H. Chen

電子物理學系

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO₃) into MADN and 15% cesium carbonate (Cs₂CO₃) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p-and n-doped carrier transport layers.

原文	English
頁（從 - 到）	503-506
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	40
發行號	1
DOIs	https://doi.org/10.1889/1.3256826
出版狀態	Published - 1 1月 2009
事件	2009 Vehicles and Photons Symposium - Dearborn, MI, 美國持續時間: 15 10月 2009 → 16 10月 2009

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10.1889/1.3256826

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abstract = "A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO3) into MADN and 15% cesium carbonate (Cs2CO3) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p-and n-doped carrier transport layers.",

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AU - Hsieh, Ming Ta

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AU - Lin, Kuan Heng

AU - Chen, Chin H.

PY - 2009/1/1

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N2 - A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO3) into MADN and 15% cesium carbonate (Cs2CO3) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p-and n-doped carrier transport layers.

AB - A power-efficient and stable organic light emitting diode with a simplified structure based on 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) has been developed. The incorporation of 10% tungsten oxide (WO3) into MADN and 15% cesium carbonate (Cs2CO3) into MADN has been found to improve the hole and electron injection, respectively. Based on this work, it is anticipated that p-i-n OLEDs fabrication process can be considerably simplified and the bill of materials cost can reduced by using one ambipolar host for both the p-and n-doped carrier transport layers.

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Stable and efficient organic light emitting diodes based on a single host of p-doped and n-doped layers

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