Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu; Yi Chun Tung; Chih Yang Tseng; Wei Chun Wang; Hsuan Han Chen; Tsung Ming Lee; Wu Ching Chou; Zhi Wei Zheng; Chun Hu Cheng; Hsiao Hsuan Hsu

doi:10.1149/2.0041910jss

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu, Yi Chun Tung, Chih Yang Tseng, Wei Chun Wang, Hsuan Han Chen, Tsung Ming Lee, Wu Ching Chou, Zhi Wei Zheng, Chun Hu Cheng, Hsiao Hsuan Hsu^*

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

原文	English
頁（從 - 到）	P553-P556
期刊	ECS Journal of Solid State Science and Technology
卷	8
發行號	10
DOIs	https://doi.org/10.1149/2.0041910jss
出版狀態	Published - 17 9月 2019

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abstract = "In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.",

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year = "2019",

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T1 - Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

AU - Liu, Chien

AU - Tung, Yi Chun

AU - Tseng, Chih Yang

AU - Wang, Wei Chun

AU - Chen, Hsuan Han

AU - Lee, Tsung Ming

AU - Chou, Wu Ching

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

AU - Hsu, Hsiao Hsuan

PY - 2019/9/17

Y1 - 2019/9/17

N2 - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

AB - In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

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DO - 10.1149/2.0041910jss

M3 - Article

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SN - 2162-8769

VL - 8

SP - P553-P556

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 10

ER -

Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

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