Stabilizing ferroelectric domain switching of hafnium aluminum oxide using metal nitride electrode engineering

Chien Liu, Yi Chun Tung, Chih Yang Tseng, Wei Chun Wang, Hsuan Han Chen, Tsung Ming Lee, Wu Ching Chou, Zhi Wei Zheng, Chun Hu Cheng, Hsiao Hsuan Hsu*

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories.

原文English
頁(從 - 到)P553-P556
期刊ECS Journal of Solid State Science and Technology
8
發行號10
DOIs
出版狀態Published - 17 9月 2019

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