Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Mingyue Qu, Chih Hsiang Chang, Ting Meng, Qun Zhang*, Po-Tsun Liu, Han Ping D. Shieh

*此作品的通信作者

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O 2 , and N 2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O 2 and N 2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O 2 , the TFT device with saturation mobility of 27.55 cm 2 V −1 s −1 , threshold voltage of 0.5 V and drain current on-off ratio of 10 8 is obtained. After an applied V GS of 25 and −25 V for 2000 s in darkness, the values of ΔV th are 4.5 and −0.92 V, respectively.

原文English
文章編號1600465
頁數4
期刊Physica Status Solidi (A) Applications and Materials Science
214
發行號2
DOIs
出版狀態Published - 2月 2017

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