Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions

Mingyue Qu, Chih Hsiang Chang, Ting Meng, Qun Zhang*, Po-Tsun Liu, Han Ping D. Shieh

*此作品的通信作者

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O2, and N2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O2 and N2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O2, the TFT device with saturation mobility of 27.55 cm2V−1s−1, threshold voltage of 0.5 V and drain current on-off ratio of 108 is obtained. After an applied VGS of 25 and −25 V for 2000 s in darkness, the values of ΔVth are 4.5 and −0.92 V, respectively.

原文English
文章編號1600465
頁數4
期刊Physica Status Solidi (A) Applications and Materials Science
214
發行號2
DOIs
出版狀態Published - 2月 2017

指紋

深入研究「Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions」主題。共同形成了獨特的指紋。

引用此