摘要
Amorphous tungsten-doped indium oxide thin-film transistors (a-IWO-TFTs) are prepared by RF sputtering and annealed in air, O 2 , and N 2 ambients. The influence of annealing ambient on the electrical characteristics and stability of the a-IWO-TFTs is investigated. It is found that the characteristics and stability are improved in O 2 and N 2 ambients, which can be explained by the reduction of structural defects and oxygen vacancies. When annealed in O 2 , the TFT device with saturation mobility of 27.55 cm 2 V −1 s −1 , threshold voltage of 0.5 V and drain current on-off ratio of 10 8 is obtained. After an applied V GS of 25 and −25 V for 2000 s in darkness, the values of ΔV th are 4.5 and −0.92 V, respectively.
原文 | English |
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文章編號 | 1600465 |
頁數 | 4 |
期刊 | Physica Status Solidi (A) Applications and Materials Science |
卷 | 214 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 2月 2017 |