The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.
|頁（從 - 到）||225-227|
|期刊||Digest of Technical Papers - SID International Symposium|
|出版狀態||Published - 2018|
|事件||SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States|
持續時間: 20 5月 2018 → 25 5月 2018