Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

Qun Zhang*, Zhao Yang, Mingyue Qu, Ruofan Fu, Po Tsun Liu*, Han Ping D. Shieh

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.

原文English
頁(從 - 到)225-227
頁數3
期刊Digest of Technical Papers - SID International Symposium
49
發行號1
DOIs
出版狀態Published - 2018
事件SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
持續時間: 20 5月 201825 5月 2018

指紋

深入研究「Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors」主題。共同形成了獨特的指紋。

引用此