Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

Qun Zhang; Zhao Yang; Mingyue Qu; Ruofan Fu; Po Tsun Liu; Han Ping D. Shieh

doi:10.1002/SDTP.12531

Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

Qun Zhang^*, Zhao Yang, Mingyue Qu, Ruofan Fu, Po Tsun Liu, Han Ping D. Shieh

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.

原文	English
頁（從 - 到）	225-227
頁數	3
期刊	Digest of Technical Papers - SID International Symposium
卷	49
發行號	1
DOIs	https://doi.org/10.1002/SDTP.12531
出版狀態	Published - 2018
事件	SID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States 持續時間: 20 5月 2018 → 25 5月 2018

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10.1002/SDTP.12531

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title = "Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors",

abstract = "The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.",

keywords = "sputtering, stability, thin film transistor, tungsten-doped indium oxide",

author = "Qun Zhang and Zhao Yang and Mingyue Qu and Ruofan Fu and Liu, {Po Tsun} and Shieh, {Han Ping D.}",

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T1 - Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

AU - Zhang, Qun

AU - Yang, Zhao

AU - Qu, Mingyue

AU - Fu, Ruofan

AU - Liu, Po Tsun

AU - Shieh, Han Ping D.

PY - 2018

Y1 - 2018

N2 - The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.

AB - The stability of sputtered amorphous tungsten-doped indium oxide based thin film transistors was investigated after illuminated under different wavelengths and annealed in different atmospheres. It reveals that the stability is dependent on the wavelength and illumination time, and can be improved after annealed in oxygen, nitrogen or at appropriate annealing temperature.

KW - sputtering

KW - stability

KW - thin film transistor

KW - tungsten-doped indium oxide

UR - http://www.scopus.com/inward/record.url?scp=85072773588&partnerID=8YFLogxK

U2 - 10.1002/SDTP.12531

DO - 10.1002/SDTP.12531

M3 - Conference article

AN - SCOPUS:85072773588

SN - 0097-966X

VL - 49

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

Y2 - 20 May 2018 through 25 May 2018

ER -

Stability of Sputtered Amorphous Tungsten-doped Indium Oxide Based Thin-Film Transistors

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