TY - GEN
T1 - Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology
AU - Gallardo, Jethro Oroceo
AU - De Jaeger, Brice
AU - Dash, Sachidananda
AU - Tang, Shun Wei
AU - Tran, Thanh Nga
AU - Wellekens, Dirk
AU - Bakeroot, Benoit
AU - Decoutere, Stefaan
AU - Wu, Tian Li
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage (Vf) and can deliver more than 10A and 6A at Vac=3V for 25°C and 150°C, respectively. Furthermore, an on-resistance (Ron) increase of less than 20% up to 200V at 25°C/150°C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.
AB - In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage (Vf) and can deliver more than 10A and 6A at Vac=3V for 25°C and 150°C, respectively. Furthermore, an on-resistance (Ron) increase of less than 20% up to 200V at 25°C/150°C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.
KW - GaN
KW - Monolithic Integration
KW - Schottky Barrier Diode
KW - p-GaN HEMTs
UR - http://www.scopus.com/inward/record.url?scp=85122949970&partnerID=8YFLogxK
U2 - 10.1109/IPFA53173.2021.9617330
DO - 10.1109/IPFA53173.2021.9617330
M3 - Conference contribution
AN - SCOPUS:85122949970
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
SP - 1
EP - 6
BT - 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
Y2 - 15 September 2021 through 15 October 2021
ER -