Stability of Schottky Barrier Diode Integrated in p-GaN Enhancement-mode GaN Power Technology

Jethro Oroceo Gallardo, Brice De Jaeger, Sachidananda Dash, Shun Wei Tang, Thanh Nga Tran, Dirk Wellekens, Benoit Bakeroot, Stefaan Decoutere, Tian Li Wu

研究成果: Conference contribution同行評審

摘要

In this work, the performance and stability of integrated power Schottky Barrier Diodes (SBD) are reported. We demonstrate the fabrication method to integrate Gated Edge Termination (GET)-SBD into a p-GaN E-mode GaN power technology for 200V power switching applications. The 30mm wide integrated SBDs show a low forward voltage (Vf) and can deliver more than 10A and 6A at Vac=3V for 25°C and 150°C, respectively. Furthermore, an on-resistance (Ron) increase of less than 20% up to 200V at 25°C/150°C can be obtained during pulsed IV characterization and OFF-state stress, indicating a promising stability of the integrated GET-SBDs on power p-GaN Gate High Electron Mobility Transistors (HEMTs) platform.

原文English
主出版物標題2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-6
頁數6
ISBN(電子)9781665439886
DOIs
出版狀態Published - 2021
事件2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021 - Singapore, Singapore
持續時間: 15 9月 202115 10月 2021

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2021-September

Conference

Conference2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2021
國家/地區Singapore
城市Singapore
期間15/09/2115/10/21

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