Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

Artur Useinov*, Jürgen Kosel

*此作品的通信作者

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13 引文 斯高帕斯(Scopus)

摘要

Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones.

原文English
文章編號5773493
頁(從 - 到)2724-2727
頁數4
期刊IEEE Transactions on Magnetics
47
發行號10
DOIs
出版狀態Published - 1 10月 2011

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