Spin and charge tunneling transport in magnetic tunnel junctions with embedded nanoparticles

Various multilayer systems such as magnetic tunnel junctions and their modifications attract attention due to their promising applications: magnetic field sensors, magnetic memory, memristors, nano spin-valves, and resistance generators. The current progress in studying giant magnetoresistance, tunnel magnetoresistance, and spin-transfer torque (STT) can provide successful solutions of the problems related to energy consumption and thermal stability factor of magnetic random access memory (MRAM, STT MRAM). Moreover, spintronic devices have a unique advantage against semiconductor devices that they are nonvolatile. In addition, they are expected to be more scalable than semiconductor-based devices, because magnetic nano-domain is much more stable groundwork for the information storage in contrast to a charged micro-capacitor. It is well-known that the leakage current rapidly increases with a capacitor dimension reduced down to the nano-scale.