Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

H. L. Sun*, H. M. Jao, H. T. Huang, J. Y. Pan, Tuo-Hung Hou, S. Chen, S. Ramamurthy, E. Chiao, D. Wilusz, A. Chen

*此作品的通信作者

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

This paper characterizes the performance of the Applied Materials 200 mm Radiance™ Centura for 0.13 μm ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250°C/sec) and cool-down rates (90°C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 μm devices succeeded in achieving a junction sheet resistance <400 ohm/cm2 and depth <400Å on PMOS and <250Å on NMOS at 1E18/cm3 dopant concentration. The process performance with respect to device requirements and temperature control is presented.

原文English
頁面246-249
頁數4
DOIs
出版狀態Published - 九月 2001
事件9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 - Anchorage, United States
持續時間: 25 九月 200129 九月 2001

Conference

Conference9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001
國家/地區United States
城市Anchorage
期間25/09/0129/09/01

指紋

深入研究「Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®」主題。共同形成了獨特的指紋。

引用此