Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

H. L. Sun; H. M. Jao; H. T. Huang; J. Y. Pan; Tuo-Hung Hou; S. Chen; S. Ramamurthy; E. Chiao; D. Wilusz; A. Chen

doi:10.1109/RTP.2001.1013773

Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

H. L. Sun^*, H. M. Jao, H. T. Huang, J. Y. Pan, Tuo-Hung Hou, S. Chen, S. Ramamurthy, E. Chiao, D. Wilusz, A. Chen

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電子研究所

研究成果 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This paper characterizes the performance of the Applied Materials 200 mm Radiance™ Centura for 0.13 μm ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250°C/sec) and cool-down rates (90°C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 μm devices succeeded in achieving a junction sheet resistance <400 ohm/cm² and depth <400Å on PMOS and <250Å on NMOS at 1E18/cm³ dopant concentration. The process performance with respect to device requirements and temperature control is presented.

原文	English
頁面	246-249
頁數	4
DOIs	https://doi.org/10.1109/RTP.2001.1013773
出版狀態	Published - 9月 2001
事件	9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 - Anchorage, 美國持續時間: 25 9月 2001 → 29 9月 2001

Conference

Conference	9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001
國家/地區	美國
城市	Anchorage
期間	25/09/01 → 29/09/01

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10.1109/RTP.2001.1013773

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Sun, H. L., Jao, H. M., Huang, H. T., Pan, J. Y., Hou, T.-H., Chen, S., Ramamurthy, S., Chiao, E., Wilusz, D., & Chen, A. (2001). Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®. 246-249. 論文發表於 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001, Anchorage, 美國. https://doi.org/10.1109/RTP.2001.1013773

@conference{fe415f5f6fe0483590d0909bbf97ff32,

title = "Spike anneal qualification for 0.13 μm USJ technology on Radiance{\texttrademark} Centura{\textregistered}",

abstract = "This paper characterizes the performance of the Applied Materials 200 mm Radiance{\texttrademark} Centura for 0.13 μm ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250°C/sec) and cool-down rates (90°C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 μm devices succeeded in achieving a junction sheet resistance <400 ohm/cm2 and depth <400{\AA} on PMOS and <250{\AA} on NMOS at 1E18/cm3 dopant concentration. The process performance with respect to device requirements and temperature control is presented.",

author = "Sun, {H. L.} and Jao, {H. M.} and Huang, {H. T.} and Pan, {J. Y.} and Tuo-Hung Hou and S. Chen and S. Ramamurthy and E. Chiao and D. Wilusz and A. Chen",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 ; Conference date: 25-09-2001 Through 29-09-2001",

year = "2001",

month = sep,

doi = "10.1109/RTP.2001.1013773",

language = "English",

pages = "246--249",

}

Sun, HL, Jao, HM, Huang, HT, Pan, JY, Hou, T-H, Chen, S, Ramamurthy, S, Chiao, E, Wilusz, D & Chen, A 2001, 'Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®', 論文發表於 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001, Anchorage, 美國, 25/09/01 - 29/09/01 頁 246-249. https://doi.org/10.1109/RTP.2001.1013773

TY - CONF

T1 - Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

AU - Sun, H. L.

AU - Jao, H. M.

AU - Huang, H. T.

AU - Pan, J. Y.

AU - Hou, Tuo-Hung

AU - Chen, S.

AU - Ramamurthy, S.

AU - Chiao, E.

AU - Wilusz, D.

AU - Chen, A.

PY - 2001/9

Y1 - 2001/9

N2 - This paper characterizes the performance of the Applied Materials 200 mm Radiance™ Centura for 0.13 μm ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250°C/sec) and cool-down rates (90°C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 μm devices succeeded in achieving a junction sheet resistance <400 ohm/cm2 and depth <400Å on PMOS and <250Å on NMOS at 1E18/cm3 dopant concentration. The process performance with respect to device requirements and temperature control is presented.

AB - This paper characterizes the performance of the Applied Materials 200 mm Radiance™ Centura for 0.13 μm ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250°C/sec) and cool-down rates (90°C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 μm devices succeeded in achieving a junction sheet resistance <400 ohm/cm2 and depth <400Å on PMOS and <250Å on NMOS at 1E18/cm3 dopant concentration. The process performance with respect to device requirements and temperature control is presented.

UR - http://www.scopus.com/inward/record.url?scp=84982319079&partnerID=8YFLogxK

U2 - 10.1109/RTP.2001.1013773

DO - 10.1109/RTP.2001.1013773

M3 - Paper

AN - SCOPUS:84982319079

SP - 246

EP - 249

T2 - 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001

Y2 - 25 September 2001 through 29 September 2001

ER -

Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

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