Spectral shape and broadening of emission from AlGaInP light-emitting diodes

N. C. Chen, W. C. Lien, Y. K. Yang, C. Shen, Y. S. Wang, Jenn-Fang Chen

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

This work presents a model for describing the shape of the spontaneous emission spectrum from a quantum-well structure. A function is introduced to specify the probability distribution for the effective band gap. Based on this model, the coexisting carrier thermal broadening and effective band gap broadening in the spontaneous emission spectrum can be separated from each other. Applying this model to the spectra of AlGaInP light-emitting diodes reveals that the probability distribution functions are almost Gaussian. Therefore, the emission spectra can be described by an analytical expression with fitted parameters. Possible reasons for this band gap broadening are discussed. The determination of the junction temperatures from the emission spectra and possible deviations of the results thus determined are also elaborated.

原文English
文章編號074514
期刊Journal of Applied Physics
106
發行號7
DOIs
出版狀態Published - 23 10月 2009

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