Spatially-resolved EELS and EDS analysis of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

X. Wu*, M. Couillard, M. S. Lee, J. H. Chen, G. A. Botton, D. Landheer, Z. H. Lu, W. T. Ng, Tien-Sheng Chao

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