Spatially-resolved EELS and EDS analysis of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

X. Wu; M. Couillard; M. S. Lee; J. H. Chen; G. A. Botton; D. Landheer; Z. H. Lu; W. T. Ng; Tien-Sheng Chao

doi:10.1017/S1431927604884848

Spatially-resolved EELS and EDS analysis of HfO_xN_y gate dielectrics deposited by MOCVD using [(C₂H₅) ₂N]₄Hf with NO and O₂

X. Wu^*, M. Couillard, M. S. Lee, J. H. Chen, G. A. Botton, D. Landheer, Z. H. Lu, W. T. Ng, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

原文	English
頁（從 - 到）	606-607
頁數	2
期刊	Microscopy and Microanalysis
卷	10
發行號	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927604884848
出版狀態	Published - 24 9月 2004

存取文件

10.1017/S1431927604884848

其它文件與鏈接

Link to publication in Scopus

引用此

@article{895d43b189244b5494fa1307fad9565b,

title = "Spatially-resolved EELS and EDS analysis of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2",

author = "X. Wu and M. Couillard and Lee, {M. S.} and Chen, {J. H.} and Botton, {G. A.} and D. Landheer and Lu, {Z. H.} and Ng, {W. T.} and Tien-Sheng Chao",

year = "2004",

month = sep,

day = "24",

doi = "10.1017/S1431927604884848",

language = "English",

volume = "10",

pages = "606--607",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

number = "SUPPL. 2",

}

TY - JOUR

T1 - Spatially-resolved EELS and EDS analysis of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

AU - Wu, X.

AU - Couillard, M.

AU - Lee, M. S.

AU - Chen, J. H.

AU - Botton, G. A.

AU - Landheer, D.

AU - Lu, Z. H.

AU - Ng, W. T.

AU - Chao, Tien-Sheng

PY - 2004/9/24

Y1 - 2004/9/24

UR - http://www.scopus.com/inward/record.url?scp=4544358493&partnerID=8YFLogxK

U2 - 10.1017/S1431927604884848

DO - 10.1017/S1431927604884848

M3 - Article

AN - SCOPUS:4544358493

SN - 1431-9276

VL - 10

SP - 606

EP - 607

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -