Spatial correlation between efficiency and crystal structure in GaN-based light-emitting diodes prepared on high-aspect ratio patterned sapphire substrate with sputtered AlN nucleation layer
深入研究「Spatial correlation between efficiency and crystal structure in GaN-based light-emitting diodes prepared on high-aspect ratio patterned sapphire substrate with sputtered AlN nucleation layer」主題。共同形成了獨特的指紋。